Toshiba 2SC5354-1(F) 双极型晶体管 NPN 800V 5A

Technology: Si

Unit Weight: 5.500 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 100 W

DC Current Gain hFE Max: 60

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 900 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 800 V

Collector-Emitter Saturation Voltage: 1 V