Toshiba GT30J121(Q) IGBT晶体管 600V/30A DIS

Width: 4.8 mm

Height: 19 mm

Length: 15.9 mm

Technology: Si

Unit Weight: 6.756 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 170 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 30 A

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 30 A