Toshiba GT40RR21(STA1,E IGBT晶体管 Pb-F IGBT / 晶体管 TO-3PN Ic=40 Vces=1350

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 230 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 25 V, 25 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.35 kV

Continuous Collector Current Ic Max: 200 A

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 40 A