Toshiba RN1103MFV,L3F 内置晶体管的数字晶体管偏置电阻

Unit Weight: 1.500 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

Typical Input Resistor: 22 kOhms

Typical Resistor Ratio: 1

Emitter- Base Voltage VEBO: 10 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 70 at 10 mA, 5 V

Collector- Emitter Voltage VCEO Max: 50 V