Toshiba RN1115,LF(CT 内置晶体管的数字晶体管偏置电阻

Unit Weight: 2.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 100 mW

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 50 V