Toshiba RN2313,LF 数字晶体管 BRT -0.1A -50V

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 100 mW

Typical Input Resistor: 47 kOhms

Peak DC Collector Current: 100 mA

Emitter- Base Voltage VEBO: 5 V

Maximum Operating Frequency: 200 MHz

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 50 V