Toshiba SSM3J56MFV,L3F MOSFET

Vgs (Max): 8V

Power consumption: 150mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 800mA

Input Capacitance (Ciss): 100pF

Operating temperature range: 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 390mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.2|4.5V