Toshiba TK16A45D(STA4,Q,M) MOSFETs N沟MOS 16A 450V 50W 2300pF 0.27

Width: 4.45 mm

Height: 15.1 mm

Length: 10.16 mm

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 50 W

Id - Continuous Drain Current: 16 A

Rds On - Drain-Source Resistance: 270 mOhms

Vds - Drain-Source Breakdown Voltage: 450 V