Toshiba TK35E08N1,S1X MOSFETs 80V N沟道功率场效应管 55A 72W 25nC

Width: 4.45 mm

Height: 15.1 mm

Length: 10.16 mm

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 25 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 72 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 55 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 12.2 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 2 V