Toshiba TK4P55DA(T6RSS-Q) MOSFETs N沟MOS 3.5A 550V 80W 380pF 2.45

Width: 5.5 mm

Height: 2.3 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 330 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 80 W

Id - Continuous Drain Current: 3.5 A

Rds On - Drain-Source Resistance: 2.45 Ohms

Vds - Drain-Source Breakdown Voltage: 550 V