Toshiba TK4P60DB(T6RSS-Q) MOSFETs N沟MOS 3.7A 600V 80W 540pF 2.0欧姆

Width: 5.5 mm

Height: 2.3 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 11 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 80 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 3.7 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 2 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.4 V