Toshiba TK5A65DA(STA4,Q,M) MOSFETs N沟MOS 4.5A 650V 35W 700pF 1.67欧姆

Width: 4.5 mm

Height: 15 mm

Length: 10 mm

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 16 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 35 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.67 Ohms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.4 V