Toshiba TRS4A65F,S1Q 肖特基碳化硅二极管 DIODE

Technology: SiC

Unit Weight: 1.830 g

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 4 A

Ir - Reverse Current: 200 nA

Vf - Forward Voltage: 1.45 V

Vr - Reverse Voltage: 650 V

Ifsm - Forward Surge Current: 37 A

Maximum Operating Temperature: + 175 C

Vrrm - Repetitive Reverse Voltage: 650 V