Transphorm TP65H035G4YS 氮化镓场效应管 650V，35毫欧 氮化镓场效应管 TO247-4L封装

Fall Time: 8 ns

Rise Time: 12.4 ns

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 42.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 156 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 43 ns

Typical Turn-Off Delay Time: 108 ns

Id - Continuous Drain Current: 46.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 41 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3.6 V