Transphorm TP65H070G4LSG-TR 氮化镓场效应晶体管 GAN FET 650V 29A QFN8x8

Fall Time: 6.5 ns

Rise Time: 9 ns

Technology: GaN

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 8.4 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 96 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 27 ns

Typical Turn-Off Delay Time: 71 ns

Id - Continuous Drain Current: 29 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 85 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.8 V