Transphorm TP65H070G4PS 氮化镓场效应管 GAN FET 650V 29A TO220

Fall Time: 7.2 ns

Rise Time: 6.2 ns

Technology: GaN

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 96 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 43.4 ns

Typical Turn-Off Delay Time: 56 ns

Id - Continuous Drain Current: 29 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 85 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.7 V