Transphorm TP65H070LDG-TR 氮化镓场效应晶体管 227-TP65H070LSG-TR

Technology: GaN

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: HEMT

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 96 W

Id - Continuous Drain Current: 25 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 72 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V