Transphorm TP65H150G4PS 氮化镓场效应管 GAN FET 650V 13A TO220

Fall Time: 8 ns

Rise Time: 5.2 ns

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 52 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 37.8 ns

Typical Turn-Off Delay Time: 48 ns

Id - Continuous Drain Current: 13 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 180 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.8 V