Transphorm TP65H300G4JSGB-TR 氮化镓场效应管 GAN FET 650V 9.2A QFN5x6

Fall Time: 3.6 ns

Rise Time: 4.6 ns

Technology: GaN

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 3.5 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 41.6 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 33 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 9.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 312 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.8 V