Transphorm TP65H480G4JSG 氮化镓场效应晶体管 GAN FET 650V 3.6 A PQFN56

Fall Time: 7.6 ns

Rise Time: 3.5 ns

Technology: GaN

Channel Mode: Enhancement

Configuration: Cascode

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Qg - Gate Charge: 9 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 13.2 W

Vgs - Gate-Source Voltage: - 18 V, + 18 V

Typical Turn-On Delay Time: 16.6 ns

Typical Turn-Off Delay Time: 53.2 ns

Id - Continuous Drain Current: 3.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 560 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.8 V