TT Electronics / Semelab 2N2369ADCSM 双极晶体管 (BJTs)

Technology: Si

Unit Weight: 8 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 120 at 10 mA, 350 mV

Emitter- Base Voltage VEBO: 4.5 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 10 mA, 350 mV

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 450 mV