Vishay General Semiconductor IRFR214TRPBF-BE3 N沟道MOSFET 250V

Fall Time: 7 ns

Rise Time: 7.6 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 8.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 25 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 16 ns

Id - Continuous Drain Current: 2.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.8 S

Rds On - Drain-Source Resistance: 2 Ohms

Vds - Drain-Source Breakdown Voltage: 250 V

Vgs th - Gate-Source Threshold Voltage: 2 V