Vishay General Semiconductor IRFR9014PBF-BE3 MOSFETs TO252 P 通道 60V

Fall Time: 31 ns

Rise Time: 63 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 12 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 25 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 9.6 ns

Id - Continuous Drain Current: 5.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.4 S

Rds On - Drain-Source Resistance: 500 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2 V