Vishay General Semiconductor IRFR9210PBF-BE3 MOSFETs TO252 200V 1.9A P型MOSFET

Fall Time: 13 ns

Rise Time: 12 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 8.9 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 25 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 1.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.98 S

Rds On - Drain-Source Resistance: 3 Ohms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 4 V