Vishay General Semiconductor SI1441EDH-T1-GE3 MOSFETs -20V Vds 10V Vgs SC70-6

Width: 1.25 mm

Height: 1 mm

Length: 2.1 mm

Fall Time: 560 ns

Rise Time: 300 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 33 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.6 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 150 ns

Typical Turn-Off Delay Time: 1620 ns

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 34 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V