Vishay General Semiconductor SI1469DH-T1-E3 MOSFETs -20V Vds 12V Vgs SC70-6

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 8.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2.78 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 2.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 155 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V