Vishay General Semiconductor SI2333CDS-T1-E3 MOSFETs 12V 5.1A 2.5W 35毫欧 @ 4.5V

Width: 1.6 mm

Height: 1.45 mm

Length: 2.9 mm

Fall Time: 12 ns

Rise Time: 35 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 15 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 7.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 18.5 S

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 400 mV