Vishay General Semiconductor SI4401DDY-T1-GE3 MOSFETs -40V Vds 20V Vgs SO-8

Fall Time: 9 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 750 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 64 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 6.3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 16.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 37 S

Rds On - Drain-Source Resistance: 15 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V