Vishay General Semiconductor SI5922DU-T1-GE3 N沟MOSFET 30V Vds 4.7nC Qg典型值

Technology: Si

Unit Weight: 85 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 15 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 10.4 W

Vgs - Gate-Source Voltage: - 16 V, + 20 V

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 19.2 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V