Vishay General Semiconductor SI7110DN-T1-E3 MOSFETs 20V 21.1A 0.0053欧姆

Width: 3.3 mm

Height: 1.04 mm

Length: 3.3 mm

Fall Time: 10 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 14 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 36 ns

Id - Continuous Drain Current: 21.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 71 S

Rds On - Drain-Source Resistance: 5.3 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V