Vishay General Semiconductor SI7216DN-T1-GE3 MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8

Width: 3.3 mm

Height: 1.04 mm

Length: 3.3 mm

Fall Time: 5 ns

Rise Time: 57 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 19 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 20.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 19 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 50 C

Forward Transconductance - Min: 25 S

Rds On - Drain-Source Resistance: 32 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1 V