Vishay General Semiconductor SI7456DP-T1-GE3 MOSFETs 100V 9.3A 5.2W 25毫欧 @ 10V

Fall Time: 26 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 36 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 5.2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 9.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 35 S

Rds On - Drain-Source Resistance: 25 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V