Vishay General Semiconductor SI7469DP-T1-E3 MOSFETs -80V Vds 20V Vgs PowerPAK SO-8

Width: 5.15 mm

Height: 1.04 mm

Length: 6.15 mm

Fall Time: 110 ns

Rise Time: 220 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 160 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 83 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 95 ns

Id - Continuous Drain Current: 28 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 52 S

Rds On - Drain-Source Resistance: 29 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 3 V