Vishay General Semiconductor SIR5708DP-T1-RE3 MOSFETs SOT669 150V 33.8A N沟MOSFET

Fall Time: 18 ns

Rise Time: 16 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 30 ns

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 4 V