Vishay General Semiconductor SQA604CEJW-T1_GE3 汽车用N沟道MOSFET 80V (D-S) 175°C MOSFET，80 mΩ 10V，95 mΩ 4.5V

Fall Time: 5 ns

Rise Time: 3 ns

Technology: Si

Mounting Style: SMD/SMT

Qg - Gate Charge: 6.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 13.6 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 14 ns

Id - Continuous Drain Current: 5.63 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10.2 ns

Rds On - Drain-Source Resistance: 80 mOhms, 95 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 2 V