Vishay General Semiconductor SQUN702E-T1_GE3 MOSFETs 40伏 N型和P型共漏+ 200伏

Fall Time: 2 ns, 10 ns, 19 ns

Rise Time: 3 ns, 9 ns, 12 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Triple

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel, 1 P-Channel

Qg - Gate Charge: 14 nC, 23 nC, 30.2 nC

Number of Channels: 3 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 48 W, 60 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 7 ns, 8 ns, 10 ns

Typical Turn-Off Delay Time: 15 ns, 22 ns, 43 ns

Id - Continuous Drain Current: 20 A, 30 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 16 S, 19 S, 65 S

Rds On - Drain-Source Resistance: 9.2 mOhms, 30 mOhms, 60 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V, 200 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V, 2.5 V