Vishay General Semiconductor VS-CPV363M4KPBF IGBT晶体管 600伏 6.0安培

Width: 7.87 mm

Height: 21.97 mm

Length: 62.43 mm

Technology: Si

Unit Weight: 20 g

Configuration: Hex

Mounting Style: Through Hole

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 11 A