Vishay General Semiconductor VS-ENZ025C60N PressFit 电源模块 EMIPAK 600V 25A N-CH 碳化硅

Fall Time: 22 ns

Rise Time: 26 ns

Technology: Si

Configuration: 1-Phase Bridge

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 600 V

Pd - Power Dissipation: 104 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 83 ns

Typical Turn-Off Delay Time: 111 ns

Id - Continuous Drain Current: 26 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 71 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V