Vishay General Semiconductor VS-GA75TS120UPBF IGBT模块 110安培 1200伏 半桥

Width: 35 mm

Height: 30 mm

Length: 94 mm

Technology: Si

Unit Weight: 200 g

Configuration: Dual

Mounting Style: Screw Mount

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current at 25 C: 110 A