Vishay General Semiconductor VS-GP100TS60SFPBF IGBT晶体管 Ic 100A Vce(On)1.16V 半桥沟槽型 P

Technology: Si

Unit Weight: 200 g

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 781 W

Gate-Emitter Leakage Current: +/- 500 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 337 A

Collector-Emitter Saturation Voltage: 1.16 V

Continuous Collector Current at 25 C: 337 A