Vishay General Semiconductor VS-GT180DA120U IGBT模块 1200V, 180A Tch IGBT SOT-227 Bplr Tnstr

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.087 kW

Gate-Emitter Leakage Current: 220 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current at 25 C: 281 A