Vishay General Semiconductor VS-GT55LA120UX IGBT晶体管 SOT-227 - 低侧斩波器 IGB

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 291 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.39 V

Continuous Collector Current at 25 C: 68 A