Vishay General Semiconductor VS-GT75YF120UT IGBT晶体管 ECONO - 4个装 IGBT

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 431 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 118 A