Vishay Siliconix SI3483DDV-T1-GE3 MOSFETs TSOP P 通道 30V

Fall Time: 42 ns

Rise Time: 140 ns

Technology: Si

Unit Weight: 20 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 9.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 3 W

Vgs - Gate-Source Voltage: - 20 V, + 16 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 31.2 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.2 V