Vishay Siliconix SIHA22N60AE-GE3 MOSFETs TO220 600V 8A N沟MOSFET

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: Through Hole

Qg - Gate Charge: 48 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 33 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 180 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V