Vishay Siliconix SIHR100N60EF-T1GE3 金属氧化物半导体场效应晶体管

Fall Time: 30 ns

Rise Time: 45 ns

Technology: Si

Mounting Style: SMD/SMT

Qg - Gate Charge: 53 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 347 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 38 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 12 S

Rds On - Drain-Source Resistance: 87 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V