Vishay Siliconix SQD40061EL_GE3 MOSFETs -40V Vds 20V Vgs DPAK (TO-252)

Fall Time: 160 ns

Rise Time: 180 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 280 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 107 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 145 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 103 S

Rds On - Drain-Source Resistance: 7.1 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V