Vishay Siliconix SQJB00EP-T1_GE3 MOSFET N沟道 60V Vds AEC-Q101 认证

Fall Time: 22 ns

Rise Time: 3 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 35 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 48 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 23 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 10.5 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V