Vishay Siliconix SUD09P10-195-BE3 MOSFETs TO252 100V 8.8A P型MOSFET

Fall Time: 9 ns

Rise Time: 12 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 23.2 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 32.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 33 ns

Id - Continuous Drain Current: 8.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 12 S

Rds On - Drain-Source Resistance: 195 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V