Vishay SI1056X-T1-GE3 MOSFET

Vgs(th): 0.95V

Vgs (Max): 8V

Gate Charge (Qg): 8.7nC

Power consumption: 236mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Input Capacitance (Ciss): 400pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 89mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V